Common Base configuration of transistor, characteristics, application
Friends, today we will read about the common base configuration of BJT transistor. In this lecture, we will know its diagram, its characteristics and its application. We call it common base, because the base terminal is the common terminal for input and output. In this configuration, the emitter is input side and the collector is output.
Application:-
Properties: -
1) Its input impedance is
very low.
Ri =
ΔVBE / ΔIE
2) Its output impedance
is very high.
Ro =
ΔVCB / ΔIC
3) Its voltage gain is
high.We can say that, we got high voltage gain in the output.
4) Its current gain is
unity. That is, we get output equal to input.
5) It also has a current
amplification factor, which we call α. α is known as the ratio of output current
to input current.
α = ΔIC
/ ΔIE
Construction Diagram:-
As you know very well that for amplification we use transistor in active region. So we will understand the diagram of NPN and PNP transistor in active region very well. As shown in the diagram, the emitter terminal of transistor is connected to the one side of emitter resistance (RE). Other side of emitter resistance (RE) is connected to the negative terminal of VEE.
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CB configuration of NPN |
Positive terminal of VEE
is directly connected to the ground terminal. Base of Transistor is also
connected to the ground terminal. Collector of transistor is connected to
the one side of collector resistance (RC). Other side of
collector resistance (RC) is connected to the positive terminal of
VCC. Negative terminal of VCC is directly connected
to the ground terminal.
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CB configuration of PNP |
Working:-
The base emitter of the
transistor is the junction forward bias which we call VBE. And its collector
base is a junction reverse bias which we call VCB. If we apply KCL then
IE = IB + IC
i) When part of emitter
current reaches to the collector current is α.IE. We can say that IC
= α.IE
ii) In reverse bias mode
of collector base junction, leakage current is created due to movement of
minority charge carrier.
IC
= α.IE + I leakage
We call this leakage
current ICBO . ICBO means
current between collector and base terminal when emitter terminal is open ie IE
=0, So
IC
= α.IE + ICBO
Whatever ICBO is
in it, we can ignore it because IE is much greater than ICBO
So
IC = α.IE
α = IC / IE :- α = Current amplification factor
The value of α is always smaller than 1. Its value varies between 0.95 to 0.98.
Input characteristics of common base configuration:-
It is the curve between
emitter current (IE) and voltage of base and emitter (VBE) at constant voltage
of collector and base (VCB). The first thing to do is to keep the VCB value
constant. Then we have to increase the value of VEE gradually, as given in fig.
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Input characteristics of CB configuration |
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Chart of input characteristics of CB configuration |
As
we increase VEE, the value of IE and VBE also increases with it. Similarly, by
keeping the constant value of VCB three times, we get the reading of IE and VBE
as shown in fig.
Output characteristics of common base configuration:-
It is the curve between
collector current (IC) and voltage of collector and base (VCB) at constant
emitter current (IE). The first thing to do is to keep the value of IE
constant. Then we have to increase the value of VCC slowly, as given in fig.
![]() |
Output characteristics of CB configuration |
![]() |
Chart of output characteristics of CB configuration |
As soon as we increase
VCC, IC is smaller than IE till some reading and later becomes equal to IE. But
the value of VCB changes slowly. Similarly, by keeping the constant value of IE
three times, we get the reading of IC and VCB as shown in fig.
Waveform:-
Its input waveform has a low signal and in its output waveform we get a high signal.
Click to know about Common Emitter configuration
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